Abstract
Transitions from the ground state to excited states of the Be acceptor confined in GaAs/ ${\mathrm{Al}}_{\mathrm{x}}$${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathrm{x}}$As quantum wells (QW's) have been observed via two independent spectroscopic techniques: Two-hole transitions of the acceptor bound exciton (BE) observed in selective photoluminescence and resonant Raman scattering. The effect of confinement on the observed acceptor transitions has been investigated by varying the QW thicknesses in the range 50--138 A\r{}. The results obtained are compared with recent theoretical predictions. An almost linear relationship was found between the binding energy of the acceptor BE and the observed acceptor transitions. This fact implies that a correspondence to Haynes's rule in bulk should be valid also for this QW system.
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