Abstract
In this work the parameters of plasma (electron temperature Te,electron density ne, electron velocity and ion velocity) have beenstudied by using the spectrometer that collect the spectrum ofplasma. Two cathodes were used (Si:Si) P-type and deposited onglass. In this research argon gas has been used at various values ofpressures (0.5, 0.4, 0.3, and 0.2 torr) with constant deposition time4 hrs. The results of electron temperature were (31596.19, 31099.77,26020.14 and 25372.64) kelvin, and electron density (7.60*1016,8.16*1016, 6.82*1016 and 7.11*1016) m-3. Optical properties of Siwere determined through the optical transmission method usingultraviolet visible spectrophotometer with in the range(300 – 1100) nm.
Highlights
Co-sputtering is widely used technique for the metal oxide and metal nitride surface coatings
The distance between the targets and the substrate is about 40mm. (Si:Si) films with is a thickness of about 56 nm were deposited on class substrates at room temperature by DC cosputtering at an Ar gas (99.9995% in purity) pressure of (0.2 - 0.5) torr
The principle of Te and ne determination by optical emission spectroscopy (OES) in cold plasmas is normally based on determination of the ratio between two prominent emission lines which are sensitive to the changes of a chosen parameter, often referred to as the ‘line ratio method'
Summary
Co-sputtering is widely used technique for the metal oxide and metal nitride surface coatings. The electron temperature and density can be calculated in low pressure plasma spectroscopically.
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