Abstract
The H1b and H1c lines are observed in type-Ia diamonds following radiation damage and annealing at temperatures above 700 degrees C. The 2.086 eV (595 nm) centre in diamond is destroyed by annealing in the temperature range around 700 to 1000 degrees C, and in this paper it is shown that the H1b and H1c centres are formed when all, or part, of the 2.086 eV centre is trapped at the A form or B form of nitrogen, respectively. Uniaxial stress measurements show that the H1b and H1c lines both have monoclinic I symmetry. The stress parameters determined are consistent with line broadening produced by random strains, and with the virtual absence of vibronic bands associated with the H1b and H1c zero-phonon lines.
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