Abstract
Spectroscopic studies of transition metal (Tm) and rare earth (Re) oxides, combined with ab initio theory identify the band edge electronic structure of high-K dielectrics. The lowest conduction band states are derived from anti-bonding Tm (Re) d ∗ -states. A novel method for obtaining independent control of band gap energies and dielectric constants in complex oxides, ReTmO 3, results from coupling of Tm and Re atom d-states bonded to the same oxygen atom.
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