Abstract
A methodological approach to strain analysis in semiconductor devices is presented. Two methods, degree-of-polarization of photoluminescence and photocurrent spectroscopy, are compared by analyzing a spatially inhomogeneous strained test sample, namely, a high-power diode laser array that is affected by packaging-induced stress. Both methods concordantly reveal a −0.1% uniaxial compression in the vicinity of the midpoint of the active region of the device, demonstrating the compatibility of and justifying the assumptions involved in the two different approaches. Furthermore, we discuss some distinctive details of the processing-induced strains observed in the vicinities of metallized contacts and grooves involved in the device design.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
