Abstract
Yb3+:Bi4Si3O12 single crystal with Yb3+ concentration of 5.7 at.% has been grown successfully by the Czochralski method. The energy level positions of Yb3+ in Bi4Si3O12 crystal were determined based on the absorption and fluorescence spectra. The peak absorption cross-section is 0.98 × 10−20 cm2 at 976 nm and the peak emission cross-section is 0.57 × 10−20 cm2 at 1035 nm. The fluorescence lifetime of the excited multiplet is 1.26 ms. Diode-pumped continuous-wave laser operation around 1038 nm has been demonstrated in the Yb3+:Bi4Si3O12 crystal with a slope efficiency of 27% and maximum output power of 240 mW.
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