Abstract
Production environments require optical sensors more robust and compact than those used in research. In this paper such an optimized reflectance anisotropy spectroscopy (RAS) configuration is described and employed for MOVPE real-time growth monitoring. Measurements were performed in commercial epitaxial systems with rotating substrates. During growth of GaAs/InGaP heterojunction bipolar transistors (HBTs) RAS spectra were taken continuously with high time resolution. The signals are transformed into a color code for easy judgement during growth. Characteristic spectroscopic signatures can be used as fingerprints, providing information on surface stoichiometry and morphology, doping level, adsorbate coverage, layer relaxation and temperature changes at any stage of the growth process.
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