Abstract
An extreme ultraviolet (EUV) light source (λ = 9–25 nm, 10 Hz) was developed to study EUV ablation physics and applications. The EUV source device including an elliptical total reflection mirror was optimized to provide EUV irradiance as high as 4.2 × 109 W/cm2 on ablation samples. Time-resolved spectroscopic observation of ablation plasma from a Si plate was conducted to derive electron temperature and density, and compared with those for laser-produced ablation at the same irradiance. Difference in ablation mechanism between two sources is discussed.
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