Abstract
The structure of porous silicon (por-Si) obtained by electrochemical etching of Si(100) single crystal wafers in an aqueous ammonium fluoride solution with isopropyl alcohol additions has been studied using X-ray reflection spectroscopy, X-ray photoelectron spectroscopy, and external X-ray quantum yield measurements. It is established that por-Si layers obtained by the nontraditional technology (not involving hydrofluoric acid) possess a partly amorphized structure and bear a stable surface oxide film with a thickness not exceeding 5 nm.
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