Abstract
Highly intense blue photoluminescence emission was observed from Dy doped ZnO thin films prepared by RF magnetron sputtering technique at a substrate temperature of 500 °C on to quartz substrate. X-ray diffraction (XRD) and the Raman spectra for the as deposited and Dy incorporated ZnO thin films suggest that the thin films are polycrystalline with a hexagonal wurtzite structure. The Raman spectra further indicates that the Dy doped ZnO films show bi-axial compressive stress. The average grain size calculated from the XRD and AFM images show that the densely distributed particles are in the nano dimension. All the films exhibit very good transmittance in the visible and near infrared region. The 1 % Dy doped ZnO film gives a low dc resistivity of 1.063 × 10−5 Ωm. The dc electrical resistivity and good emission properties enable these films to be used as good conductive thin film phosphors for low voltage field emission display applications.
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