Abstract
When producing large AgGaSe2 single crystals of high optical quality, the shadow and light scattering techniques were found effective. Annealing in proper atmosphere allows one to affect the crystal composition and the state of submicron-sized inclusions and point defects. Stoichiometric crystals demonstrate mainly photoluminescence (PL) of free excitons. New PL bands, a 727/745nm doublet and a 950nm broad band, are associated with selenium vacancy, VSe, and cation antisite defect, GaAg, respectively. Using the thermoactivation spectroscopy, the traps of charge carriers were revealed in AgGaSe2: those with thermal activation energy ET>0.4eV were found responsible for photoinduced absorption on the 0.1cm−1 level.
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