Spectroscopic evidence for hydrogen diffusion through a several-nanometers-thick titanium carbonitride layer on silicon.

Abstract

Multiple internal reflection Fourier transform infrared spectroscopy, together with other analytical techniques, was used to follow the diffusion of atomic hydrogen through a 10-nm-thick titanium carbonitride layer deposited onto a Si(100)-2x1 surface from tetrakis(dimethylamino)titanium as a chemical vapor deposition precursor. The recombinative desorption of hydrogen from the TiCN/Si interface was shown to coincide with the temperature range where most Ti-based diffusion barriers break down.