Abstract
Energy shifts of interband-transition edges with strain relaxation of CdTe(1 1 1) epitaxial films grown on GaAs(0 0 1) substrates were detected using spectroscopic ellipsometry measurements at various layer thicknesses. The E 1, E 1 + Δ 1 and E 2 edges for the films were found to shift to higher energies from those of bulk CdTe at the layer thicknesses below 1.3 μm. Result of a quantitative line-shape analysis on the transition edges indicates that the strain-induced energy shifts are proportional to the strength of the residual in-plane compressive strain in the film.
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