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Abstract
AbstractSpectroscopic ellipsometry (SE) was used to characterize the conventional back contact layer (Mo) as well as a novel top window layer (In2S3) for use in chalcopyrite photovoltaics technology. For the Mo back contact, in‐situ SE measurements of thin films magnetron sputtered onto glass enabled determination of ε at different thicknesses during growth. The observed strong variations could be understood on the basis of a Drude relaxation time that varies with the Mo film thickness. For the In2S3 window layer, ex‐situ SE measurements showed critical point structures at 2.77±0.08 eV, 4.92±0.005 eV, and 5.64 ± 0.005 eV, as well as an absorption tail with an onset near 1.9 eV. A comparison of the solar cell performance in simulations using either In2S3 or conventional CdS revealed similar quantum efficiencies irrespective of the selected window layer. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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