Spectroscopic ellipsometry of Zn1−xCuxO thin films based on a modified sol–gel dip-coating technique

Abstract

Nanocrystalline Zn1−xCuxO thin films (x=0, 0.01, 0.02, 0.03, 0.04 and 0.05) were synthesized by sol–gel dip-coating technique on a quartz substrate. These films were annealed at 350°C for 2h. The X-ray diffraction showed a hexagonal crystal structure with high intensity peak for the (002) reflection plane indicating preferential growth along the c-axis of the crystal lattice. The peak position related to the (002) peak was shifted as a result of the copper ion incorporation, confirming the interstitial substitution of the zinc ions by the copper ions. This interstitial substitution leads to a decrease of an average crystallite size and lattice constants and an increase of the micro-strain up to 2at.% of the copper amount. The surface morphology was explored by scanning electron microscopy which confirmed the homogenous distribution of nanoparticles in the deposited films along the quartz substrates. The energy dispersion X-ray spectroscopy revealed absence of impurities in the as-deposited films. The high resolution electron microscopy and selected area electron diffraction depicted that the films have polycrystalline nature. The film thickness and optical constants of the Zn1−xCuxO thin films were estimated by fitting the spectroscopic ellipsometric data (ψ and Δ) using three different models. The refractive index was fitted using harmonic oscillator model from which the oscillator and the dispersive energies were found. The dielectric constant, dielectric loss, energy loss functions were also determined.