Abstract
AbstractAnodized layers on InAsSb, InSb, and InAs surfaces are characterized using phase modulation spectroscopic ellipsometry in a wide spectral range from 0.6 to 6.5 eV. Single crystal InAs0.04Sb0.94 layer was grown using melt‐epitaxy (ME). Optical properties of anodized layer prepared on InAsSb single crystal are compared with those on pure single crystals of InAs and InSb. Ellipsometric spectra of were fitted to the Tauc‐Lorentz model describing the anodizing layer optical functions. Clear tendency of ultraviolet shift of the band gap energy with decreasing antimony content is observed. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
