Abstract
Metalorganic vapor phase epitaxy of indium nitride (InN) on sapphire was studied and optimized in situ by spectroscopic ellipsometry. Layers with smooth surface morphology were obtained on low-temperature nucleation layers on nitrided sapphire substrates using trimethylindium and ammonia at high V/III ratios above 30 000. Ellipsometry reveals a growth regime for InN below 550°C and best crystalline quality at 500°C. Improvement of the crystalline quality is achieved at lower growth temperatures. This tendency is confirmed by X-ray diffraction while still some residual mosaicity of the layers can be observed. The appearance of pronounced E 1 and A 2 Raman modes, obeying the selection rules of hexagonal InN, confirms the good structural quality of the samples grown.
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