Abstract
The wide applicability of spectroscopic ellipsometry (SE) to characterize non-destructively silicon-on-insulator materials is illustrated with a number of case studies. SE allows the determination of not only the optical properties of single layers as a function of the wavelength but also their thickness with great accuracy. When reliable reference values for the complex refractive indices of the components of a multilayer system are available, information on layer thicknesses, interface roughness and even composition of mixed layers can be obtained with remarkable accuracy. In such cases SE can act as a one-dimensional optical high resolution microscope and even to some extent as an optical “Rutherford backscattering spectrometer”.
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