Abstract
We prepare Six(ZrO2)100?x composite films using the co-sputtering method. The chemical structures of the films which are prepared under different conditions are analyzed with X-ray photoemission spectroscopy. Thermal treatment influences on optical property and resistance switching characteristics of these composite films are investigated by spectroscopic ellipsometry and semiconductor parameter analyzer, respectively. With the proper Si-doped Six(ZrO2)100?x interlayer, the Al/ Six(ZrO2)100?x/Al device cell samples present very reliable and reproducible switching behaviors. It provides a feasible solution for easy multilevel storage and better fault tolerance in nonvolatile memory application.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
