Abstract
We report highly accurate dielectric function data for ZnTe. These data were made possible by the high quality of the heteroepitaxial material and the development of a chemical etching procedure for producing abrupt surfaces on ZnTe; they provided the first observation of the E0+Δ0 structure in ZnTe by spectroscopic ellipsometry and evidence for several contributions to the E2 structure. Accurate critical point energies were obtained by Fourier analysis.
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