Abstract
AbstractPseudodielectric functions of low temperature grown GaAs (LT GaAs) measured by spectroscopic ellipsometry are presented. The spectral range includes the El (2.92eV) and El+ΔAl (3.13eV) critical point structure of GaAs. A Lorentz-oscillator model was used to fit the dielectric function of LT GaAs for samples with nominal growth temperatures (Tg) varying from 200°C to 580°C. For Tg of 200°C, 30% and 19% broadenings and −0.01 leV and −0.007eV red shifts were found for the El and El+Δl structures respectively, compared with normal GaAs. The red shift can be explained in terms of a strain effect in the LT layer. In annealed LT GaAs the broadening decreased significantly and no red shift was found.
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