Spectroscopic Detection of Medium Range Order in Hydrogenated Amorphous Silicon, a-Si(H): Applications in Photovolatics, Thin Film Transistors and Si-based Microelectronics

Abstract

Abstract Hydrogenated amorphous silicon, a-Si1-xHx, with ~ at.10% or x ~0.1±0.02, is used in photovoltaics (PV), and thin film transistors (TFT's). Amorphous Si (a-Si) thin films, thought to be free of H, are used as precursors for polycrystalline gate electrodes in microelectronics. PV and TFT alloys has been deposited by the glow discharge method (GD), remote plasma-enhanced chemical vapor deposition (RPECVD, and reactive magnetron sputtering (RMS) with bonded-H determined by deposition precursors and substrate temperatures. Two conditions are required for low Si dangling bond densities ~0.5 to 1x1016 cm−3: (i) a bonded monohydride, Si-H, concentration of ~10 at. % H, and (ii) a deposition, and/or a post-deposition anneal at ~240 °C to 300 °C. These reduce strain by introducing medium range order (MRO) as nano-meter scale aperiodically-assembled clusters. Si L2,3 X-ray absorption spectroscopy (XAS) has been used to confirm MRO extending beyond short-range order (SRO) of continuous random networks (CRN) through observation of ligand-field split d-state features. These are associated with symmetry-adapted linear combinations (SALCs) of atomic states forming molecular orbital valence bands. XAS and photoelectron spectroscopy (PES) studies have confirmed that a-Si used for microelectronic applications also has MRO as well. This is associated with a H-transfer reaction from an Si-H bond of the cluster into a Si-H-Si bonding arrangement on near-neighbor sites. MRO has also identified by other spectroscopic techniques: spectroscopic ellipsomentry (SE), and ultra-violet or X-ray photoemission spectroscopy (UPS or XPS). The same H-atom motion induced by absorption of sun-light is responsible for the Staebler-Wronski Effect (SWE); the generation of Si-atom dangling bonds that degrade PV performance.