Abstract
Polysilicon ingots were made by float zone, using solar grade silicon (SOG-Si) prepared by acid leaching of metallurgical grade silicon (MG-Si). Impurity contents of the MG-Si and SOG-Si were analysed by emission spectroscopy and Fourier transform infrared spectroscopy. The main metal impurities Ca, Al, Fe, Cu, Mn, Mg, V, Ti and Zn and non-metal impurities C, O and B present in the two types of samples were determined. Elemental analysis for a knowledge of the impurity content is important to correlate its effect on the spectral response and diffusion length of minority carrier, and to determine solar cell process reliability. Spectral response and diffusion length for float zone silicon solar cell have been determined.
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