Abstract
ABSTRACTThe electrochemical modification of H-passivated Si(100) surface is produced and characterized by Scanning Tunneling Microscopy and Spectroscopy (STM/STS) operating in air. In order to better understand this nanometer scale modification, we have characterized spectroscopically the modified region. From the current-voltage (I/V) curves, dI/dV versus V curves and tip to sample spacing versus voltage (s/V) curves (at constant current) we have concluded that the modification induces a local electrochemical change on the surface, which in turn produces both, a decrease of the local density of surface states and a variation of the band bending in the silicon surface.
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