Abstract
X-ray photoelectron spectroscopy (XPS) and Spectroscopic Ellipsometry (SE) were used to analyse the effect of oxygen plasma treatment on properties of aluminum oxide thin films. The aluminum oxide films were fabricated using a reactive sputtering system. The as-deposited films were treated with oxygen plasma powered by an RF generator. During the plasma treatment, the pressures were set at 1 x 10-1 to 1x 10-2 mbar, while the RF supplied powers at 100 W and 200 W. It was observed that lower plasma powers and higher pressures resulted in smoother films. The O/Al ratio of the films were found to decrease with increasing plasma powers and pressures. The thickness and refractive index of the films were significantly affected by the oxygen plasma treatment process, which could be related to the change in films’ packing density and the etching at the surface.
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