Abstract
It is shown that one of the most important technological tasks for the process of reactive magnetron sputtering is to control the composition of a gas mix. Possibility of determining the composition of a gas mix using spectrometric equipment on example of argon–oxygen mix during deposition of tantalum pentoxide films is demonstrated. Results of experiments show that it is possible to control concentration of oxygen not only by change of intensity of oxygen lines, but also by relative change of intensity of argon lines.
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