Abstract

We present a study of the transient onset of lasing and ultrashort pulse formation in a 1-μm InGaAs/GaAs quantum well (QW) vertical-external-cavity surface-emitting laser (VECSEL) that is mode-locked using an intracavity semiconductor saturable absorber mirror. The intra-cavity power build-up transient is observed following modulation of the laser mode in the cavity. Measuring the rise of the frequency-doubled laser output with respect to the fundamental allows determination of mode-locking onset times and pulse-shortening per round trip. A grating monochromator has been used to resolve the optical spectrum of the fundamental intracavity radiation during pulse formation. Combining both measurements we can begin to provide a comprehensive description of pulse formation in VECSELs.

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