Spectral tuning of diamond photonic crystal slabs by deposition of a thin layer with silicon vacancy centers

Jan Fait,Karel Hruška,Lukáš Ondič,Bohuslav Rezek,Marián Varga,Alexander Kromka

doi:10.1515/nanoph-2021-0369

Abstract

Abstract The controlled extraction of light from diamond optical color centers is essential for their practical prospective applications as single photon sources in quantum communications and as biomedical sensors in biosensing. Photonic crystal (PhC) structures can be employed to enhance the collection efficiency from these centers by directing the extracted light towards the detector. However, PhCs must be fabricated with nanoscale precision, which is extremely challenging to achieve for current materials and nanostructuring technologies. Imperfections inherently lead to spectral mismatch of the extraction (leaky) modes with color center emission lines. Here, we demonstrate a new and simple two-step method for fabricating diamond PhC slabs with leaky modes overlapping the emission line of the silicon vacancy (SiV) centers. In the first step, the PhC structure with leaky modes blue shifted from the SiV emission line is fabricated in a nanocrystalline diamond without SiV centers. A thin layer of SiV-rich diamond is then deposited over the PhC slab so that the spectral position of the PhC leaky modes is adjusted to the emission line of the SiV centers, thereby avoiding the need for nanoscale precision of the structuring method. An intensity enhancement of the zero-phonon line of the SiV centers by a factor of nine is achieved. The color centers in the thin surface layer are beneficial for sensing applications and their properties can also be further controlled by the diamond surface chemistry. The demonstrated PhC tuning method can also be easily adapted to other optical centers and photonic structures of different types in diamond and other materials.

Highlights

Diamond color centers are light-emitting defects of diamond lattice [1] with potential applications in quantum information processing [2, 3], magnetometry [4, 5], and sensing [6, 7]
A thin layer of silicon vacancy (SiV)-rich diamond is deposited over the Photonic crystal (PhC) slab so that the spectral position of the PhC leaky modes is adjusted to the emission line of the SiV centers, thereby avoiding the need for nanoscale precision of the structuring method
We have shown using computer simulation that control over the spectral position of leaky modes in 2D PhC slabs requires knowledge of the material parameters and nanometer scale precision of the fabrication process, which is often beyond the fabrication possibilities

Summary

Introduction

Diamond color centers are light-emitting defects of diamond lattice [1] with potential applications in quantum information processing [2, 3], magnetometry [4, 5], and sensing [6, 7]. One of the most well-known color centers in diamond is the silicon vacancy (SiV) center [2, 8], the intensity of which depends on the surrounding environment, such as the surface termination [9]. The intensity of the photoluminescence (PL) of SiV centers and their PL decay dynamics can serve as measures of changes in the surroundings. An ensemble of SiV centers was distributed homogeneously in a diamond layer [10, 11]. The PL intensity of a thin layer with SiV centers is very low [9] and requires sophisticated detection techniques. In order to exploit this potential application of SiV centers, the first step is to develop an approach that will enable the fabrication of suitable structures for sensing experiments

Methods

Results

Conclusion