Abstract
A method is developed for investigating the temperature dependence of the transmission of semiconductor materials in the 300-1100 nm spectrum band. Experimental data have been obtained that characterize the steepness and the quantitative shift from the temperature of the absorption band edge for a number of semiconductor materials of the type GaAs, InP, and GaP in the 293-423/sup 0/K range. Results are presented of an analytic estimation of the shift from the absorption band edge temperature of certain semiconductor materials according to a known empirical dependence and their comparison with experimental data.
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