Abstract
The processes connected with obtaining luminescence with the quantum yield (QY)>1 at the excitation of wide-gap crystals (Eg>5eV) by photons of hνex⩽30eV have been discussed. A particular attention is paid to the process of photon multiplication (PM) at the cascade recombination of an electron and a hole with the participation of a two-electron F centre in MgO crystals (hνex>7.8eV, two emitted photons of 2.4 and 3.1eV) and to the PM process in α-Al2O3:Mg2+,Ti4+ due to the interaction of a mobile anion exciton with a pair of spatially correlated Mg2+ and Ti4+ impurity ions (hνex=9eV, two emitted photons of ∼5 and 1.7eV). In addition to LuF3:Pr3+ and LiGdF4:Eu3+ photon cutting materials, radiation-resistant doped metal oxides can be considered as promising radiation-resistant spectral transformers with QY>1 for gas (xenon) discharge devices.
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