Abstract
Spectral supralinearity of silicon photodiodes in visible light was investigated. The experimental spectral supralinearity results were compared with the calculation results using a device simulator, PC1D that includes the front surface recombination parameters, and these comparison results were in reasonable agreement for a silicon photodiode. These comparison results show that supralinearity in visible light clearly occurs with a front surface charge density of more than 1012 cm-2 and the included parameters are adequate for quantitatively predicting the internal quantum efficiency of silicon photodiodes.
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