Abstract
Spectral shapes of photoluminescence (PL) excitation in semiconductor crystals are analyzed on the basis of the carrier continuity equation in the steady state. The measured PLE (Photoluminescence Excitation) spectral curves are found to be in reasonable agreement with the theoretically calculated spectrum. The PL intensity increases with an onset of the band-gap energy of the sample. The PL intensity of a thick sample increases with increasing excitation photon energy and then decreases after reaching a maximum. The spectral intensity reduction in the high-energy region is due to the increase in surface recombination. The PL intensity of a thin sample increases in proportion to the absorption coefficient, where the diffusion length of the minority carriers is sufficiently larger than the sample thickness.
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