Spectral sensitivity of (Si2)1 − x (CdS)x solid solutions

Abstract

Epitaxial layers of n-type solid solutions of the (Si2)1 − x (CdS)x system (0 ≤ x ≤ 0.01) were grown by liquid phase epitaxy from a tin-based solution melt confined between two horizontal p-type single crystal silicon substrates. The photosensitivity spectra of p-Si/n-(Si2)1 − x (CdS)x structures have been measured. A photoresponse peak at E ≈ 2.35 eV (1.25 eV below the top of the valence band of silicon) has been observed, which is probably related to an impurity level due to CdS molecules.