Abstract
The spectral response of Schottky diodes on hydrogenated amorphous silicon implanted with boron has been investigated. The decrease in sensitivity in the short-wavelength range has been observed in samples implanted with the boron dose of more than 1.6×1013 ions/cm2. The experimental spectral responses are in good agreement with theoretical responses derived from the assumption that the photoexcited carriers are mainly transported by drift field.
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