Abstract
Spectral response (SR) and optical characteristics of GaAs-based heterojunction phototransistors (HPTs) have been successfully predicted for the first time through an advanced absorption model presented in the present article. The model is based on the accurate prediction of photocarriers in the active layers of the phototransistor which, when related to the base current of transistor in forward active mode, enables the prediction of optical characteristics. The importance of collection efficiency in accurate SR modelling is highlighted and it is not considered unity like all the previous studies on HPTs. The layer dependence of the optical power absorption profile at near-bandgap wavelengths is also investigated and its generalisation as a single exponential has been refuted for GaAs-based HPTs. The measured results at 635, 780 and 850 nm show good agreement to the predicted results, validating the proposed theoretical model.
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