Abstract
The temperature and concentration quenching of the luminescence of Cr2+ ions in Cr:ZnSe crystals is experimentally investigated and the radiative lifetime of the upper lasing level is determined. The values of the cross sections of absorption from the ground state of Cr2+ ions in Cr:ZnSe crystals are refined. It is shown that the absorption from the excited state of Cr2+ ions is negligible near 1.5 μm. Lasing in Cr:ZnSe single crystals is implemented with an efficiency of 31% and an output power of 186 mW using laser diode pumping at a wavelength of 1.77 μm.
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