Abstract
Abstract A spectroscopic (UV-visible) ellipsometric analysis of hydrogenated amorphous silicon carbide (a-Si 1−x C x : H) thin films, grown by plasma-enhanced chemical vapour deposition, is presented. The films were analysed by X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS) to determine their composition. In this study, a wide range of x values, from 0.16 to 0.59, was covered. These values depend mainly on the composition of the precursor gas. The spectroscopic ellipsometric analysis of the samples, by a multilayer model, shows that all the a-Si 1−x C x : H films studied consist of a homogeneous layer, on a c-Si substrate, with an overlayer (effective medium mixture of the same material and 41% voids). This analysis also provides values of the dielectric function of the layer material.
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