Spectral dependence of optical constants of heavily doped Si in region of plasma resonance of charge carriers

Abstract

The semiclassical relationships for the complex refractive index are used to find the regions of integration of the Kramers-Kronig dispersion relation required to yield the spectral dependence of the optical properties of semiconducting materials in the vicinity of the plasma resonance of the charge carriers with a prescribed accuracy. The refractive index n and the absorption coefficientκ of heavily doped Si in the vicinity of the plasma resonance of the charge carriers are determined by the Kramers-Kronig method and by the method of two media. The values of n andκ obtained by these methods are in good agreement with values calculated on the basis of the Drude-Lorentz semiclassical theory of dispersion.