Abstract
Precision measurements and a comparative analysis were made of the emission spectra of GaAs/AIGaAs and InGaAs/GaAs heterostructure injection lasers with quantum-well active layers and plane—plane cleaved cavities. Attention was focused on the correlation between the linewidth enhancement factor and the parameters of single-frequency lasing. Single-frequency emission at λ = 975 nm was observed for a quantum-well laser with strained active layers and a cw output power in excess of 100 mW was reached when the side longitudinal modes were suppressed by more than 30 dB.
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