Abstract
The origin of low-frequency noise in resonant-tunneling diodes is investigated through spectral and time-domain characterizations over a wide range of temperatures and biasing conditions. The experiments were conducted on devices fabricated on GaAs/Al/sub 0.4/Ga/sub 0.6/As material system. Detailed analyses on the temperature and bias dependences of the random telegraph noise and Lorentzian structures in the noise power spectral densities showed that the low-frequency excess noise arises from hopping conduction of electrons from the emitter to the quasi-bound states in the quantum well. The capture of an electron by a trap in the energy barrier causes fluctuations in the transmission coefficient of the electron due to the modulation of the barrier potential.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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