Abstract
The polishing pad dependency of nanotopography impact on oxide chemical mechanical polishing (CMP) was analyzed using a spectral method. Oxide films on wafers were polished using two types of polishing pads having different compressibility (soft pad and hard pad). The power spectral density (PSD) of the film thickness variations got closer to that of nanotopography after CMP. A transfer function was proposed as the ratio of PSD of the film thickness variation to that of nanotopography. The calculated transfer function quantitatively showed that the nanotopography impact on film thickness variation is apparent up to the longer wavelengths when using the hard pad.
Published Version
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