Abstract
The present work describes the results of spectral absorptivity, α, and thermal conductivity, λ, studies for compound oxides Bi4Ge3O12, Bi12GeO20, Bi4Si3O12, and Bi12SiO20 in molten and monocrystalline states. The data for the spectral absorptivity were obtained by placing the sample onto a mirror and using the transmission method. To obtain the data on the thermal conductivity of crystals, the stationary method of two identical samples was used. The data for the thermal conductivity of melts were obtained by a new stationary relative method in which the thermal conductivity of the crystal is used as a reference. Special attention is focused on numerical and experimental error analysis at high temperature. The studies have shown that α in the range of a transmission band strongly depends on crystal purity. It varies from 0.0005 cm−1 to 0.03 cm−1 for Bi4Ge3O12 and reaches 0.15 cm−1 for Bi4Si3O12. It was found that α is significantly greater for melts than for crystals, reaching (150 to 200) cm−1 for the Bi4Ge3O12 melt. The thermal conductivity of the melts under investigation was found to be much smaller than that of the corresponding crystals.
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