Abstract
The thermal conductivity of AlxGa1 – xN/GaN heterostructures (0.05 ≤ x ≤ 1) fabricated on sapphire by molecular beam epitaxy is measured. The thermal conductivities of thin AlxGa1 – xN and GaN films at room temperature are found. We analyze the concentration dependence of thermal conductivity using a virtual crystal model for thermal conductivity. A numerical model with a localized heat source is built to model heat transfer in the considered structure, and the layer thicknesses optimal for achieving a high thermal conductivity of the structure of interest are identified.
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