Specificity of mono- and disilane decomposition at silicon surface under conditions of epitaxial growth

Abstract

Basic kinetic parameters of surface hydrogen desorption and of adsorbed silicon hydrides decomposition has been evaluated by kinetic simulation based on data of the technological experiments on silicon layer growth at 450–700°C. For the molecular epitaxial growth, the silicon surface population with silicon hydrides fragments has been estimated. The relationship between the surface hydrides pyrolysis frequency and the rate of silicon atoms incorporation into the growing crystal has been found.