Abstract
Specific features of the optoelectronic properties of CdTe substrates with a modified layer and surface-barrier diodes based on them are revealed and explained by quantum confinement effects in the nanocrystalline structure of the modified layer. The formation of the modified layer is confirmed by study of its surface using atomic-force microscopy and is attributed to the processes of self-organization, which is dominant under specific annealing conditions.
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