Abstract
The processes accompanying the formation of ytterbium films on the Si(111) surface at room temperature are investigated by the contact potential difference method, Auger electron spectroscopy, low-energy electron diffraction, and thermal desorption spectroscopy. It is shown that the grown metal films are uniform in thickness and that Si atoms virtually do not dissolve in the films. The atoms of the silicon substrate can diffuse in limited amounts into the Yb metal film only when the surface is bombarded by high-energy primary electron beams employed in Auger electron spectroscopy. The results obtained permit the conclusion that the previously observed oscillations of the work function in Yb-Si(111) thin-film structures cannot originate from dissolution of silicon atoms in the ytterbium film.
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