Abstract
Specific features of the formation of submicron (70–300 nm) inclusions in Ti:sapphire (Al2O3:Ti) grown in a carbon-containing medium have been investigated. These inclusions are caused by deviation from the melt stoichiometry and are formed during the melt-crystal phase transition. These defects are submicropores containing excess aluminum and its suboxides; they can be destroyed by thermal loading of a crystal.
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