Abstract
Silicon films with a low defect concentration have been formed on a sapphire substrate using the process of solid-phase recrystallization. The method of X-ray rocking curves has been used in order to assess the crystalline quality of the silicon-on-sapphire structures. The values of the full width at half-maximum of intensity (FWHM) show that a silicon layer with the thickness d = 1000–2500 A and with high crystalline quality is formed as a result of implantation of oxygen ions (with the energy of 130 keV and the dose of 1 × 1015 cm−2) with subsequent annealing (for 30 min at 550°C and for 1 h at 1000°C).
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