Abstract
A quasi-hydrodynamic model of the transport of charge carriers under the ionizing effect of quantum radiation with the allowance made for the dynamics of heating of the semiconductor crystal by the flowing current is developed. Simulation of thermal breakdown of a nonuniformly doped p-n junction caused by a single radiation pulse is investigated. The variation in the times of relaxation of energy and pulse of electrons and suppression of the mechanism of impact ionization under the dynamic increase in the temperature of the semiconductor crystal is taken into account. The adequacy of the results of calculations is proved by comparing them with experimental data.
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