Abstract
A set of spectroscopy methods was used to study radiative and nonradiative processes at oxygen-deficient centers (ODCs) in glassy SiO 2 exposed to fast electrons. Quantitative characteristics of electron transitions at ODCs were determined. It was shown that the excited singlet S 1 state of ODCs could be ionized. The transfer of excitation energy from nonbridging oxygen centers to ODCs, which was followed by filling of the triplet state of the latter, was revealed. Regular features of relaxation processes and luminescence properties of ODCs were consistently interpreted in terms of the “neutral oxygen vacancy” model.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
